SiR626LDP-T1-RE3 Vishay Siliconix Power Semiconductors

<p>SiR626LDP-T1-RE3 is a Vishay Siliconix N-channel power MOSFET identified in manufacturer document 79573. The device has a 60 V drain-source voltage rating and is supplied in the PowerPAK SO-8 package. Vishay lists maximum drain-source on-resistance of 1.5 mΩ at VGS = 10 V and 2.1 mΩ at VGS = 4.5 V, with typical total gate charge of 41 nC under the stated datasheet conditions.</p><p>Manufacturer-listed applications include synchronous rectification, primary-side switching, DC/DC converters, solar micro inverters, motor-drive switching, battery and load switching, and industrial power equipment. Electrical limits depend on test conditions, thermal design, mounting and operating environment; engineering teams should review the current Vishay datasheet before design approval.</p><p>Mulaxis supports quotation and sourcing coordination against the exact manufacturer part number. An RFQ should include required quantity, destination, target date, packaging, date-code preference and any documentation, inspection or third-party testing requirements. Availability and commercial terms are confirmed per quotation and are not represented as live inventory on this page.</p><p>Vishay names and trademarks identify the requested manufacturer and product. They do not imply authorized distribution unless a separate verifiable statement is provided for the specific transaction.</p>